Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2

نویسندگان

  • Jakub Jadwiszczak
  • Colin O'Callaghan
  • Yangbo Zhou
  • Daniel S Fox
  • Eamonn Weitz
  • Darragh Keane
  • Conor P Cullen
  • Ian O'Reilly
  • Clive Downing
  • Aleksey Shmeliov
  • Pierce Maguire
  • John J Gough
  • Cormac McGuinness
  • Mauro S Ferreira
  • A Louise Bradley
  • John J Boland
  • Georg S Duesberg
  • Valeria Nicolosi
  • Hongzhou Zhang
چکیده

Precise tunability of electronic properties of two-dimensional (2D) nanomaterials is a key goal of current research in this field of materials science. Chemical modification of layered transition metal dichalcogenides leads to the creation of heterostructures of low-dimensional variants of these materials. In particular, the effect of oxygen-containing plasma treatment on molybdenum disulfide (MoS2) has long been thought to be detrimental to the electrical performance of the material. We show that the mobility and conductivity of MoS2 can be precisely controlled and improved by systematic exposure to oxygen/argon plasma and characterize the material using advanced spectroscopy and microscopy. Through complementary theoretical modeling, which confirms conductivity enhancement, we infer the role of a transient 2D substoichiometric phase of molybdenum trioxide (2D-MoO x ) in modulating the electronic behavior of the material. Deduction of the beneficial role of MoO x will serve to open the field to new approaches with regard to the tunability of 2D semiconductors by their low-dimensional oxides in nano-modified heterostructures.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with polymer electrolyte

We report electrical characterization of monolayer molybdenum disulfide (MoS2) devices using a thin layer of polymer electrolyte (PE) consisting of poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO4) as both a contact-barrier reducer and channel mobility booster. We find that bare MoS2 devices (without PE) fabricated on Si/SiO2 have low channel mobility and large contact resistance, bot...

متن کامل

The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility

The integration of ultra-thin gate oxide, especially at sub-10 nm region, is one of the principle problems in MoS2 based transistors. In this work, we demonstrate sub-10 nm uniform deposition of Al2O3 on MoS2 basal plane by applying ultra-low energy remote oxygen plasma pretreatment prior to atomic layer deposition. It is demonstrated that oxygen species in ultra-low energy plasma are physicall...

متن کامل

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm(2)/V · s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where th...

متن کامل

Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method

We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of c...

متن کامل

Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer

Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره 4  شماره 

صفحات  -

تاریخ انتشار 2018